Process for manufactuirng MOSFET having relatively shallow junct

Details Process for manufactuirng MOSFET having relatively shallow junct Process for manufactuirng MOSFET having relatively shallow junct

1994-06-20

1995-10-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 37, 437 44, 437 57, 437151, 437154, H01L 21265, H01L 21275, H01L 21336

Patent

active

054570603

ABSTRACT:
A process for manufacturing a MOSFET having a shallow junction of a doped region includes preparing an intermediate wafer product, applying an oxide layer on said intermediate wafer product, introducing into a dopant around an interface between said oxide layer and said intermediate wafer product, and driving said dopant into said intermediate wafer product to form a MOSFET having a relatively shallow junction of a doped region. This invention offers a simplified, efficient, and cost-effective process to obtain a MOSFET having a relatively shallow junction of a doped region and being free from electrical leakage possibly occurred at the junction.

REFERENCES:
patent: 5108940 (1992-04-01), Williams
patent: 5264380 (1993-11-01), Pfiester
patent: 5270235 (1993-12-01), Ito
patent: 5270237 (1993-12-01), Sang

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