Low resistance, durable gate contact pad for thyristors

Details Low resistance, durable gate contact pad for thyristors Low resistance, durable gate contact pad for thyristors

1976-09-13

1978-06-27

James, Andrew J.

357 55, 357 39, 357 79, 357 86, H01L 2974, H01L 2342, H01L 2344

Patent

active

040978877

ABSTRACT:
The specification discloses a power thyristor of the P-gate type wherein the outer cathode layer of N type conductivity overlies the P layer in the gate region. A gate pad is formed as a metallic coating over the N layer in the gate region with direct metallic connection through or around the underlying N layer and into the P type gating layer thereunder.

REFERENCES:
patent: 3475666 (1969-10-01), Hutson
patent: 3494791 (1970-02-01), Eugster
patent: 3525910 (1970-08-01), Philips
patent: 3565705 (1971-02-01), Renelle
patent: 3725753 (1973-04-01), Garrett
patent: 3751726 (1973-08-01), Einthoven et al.
patent: 3755722 (1973-08-01), Harland et al.
patent: 3879744 (1975-04-01), Dumas
patent: 3996601 (1976-12-01), Hutson
patent: 4035831 (1977-07-01), Saeki

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