Manufacturable process for tungsten polycide contacts using amor

Details Manufacturable process for tungsten polycide contacts using amor Manufacturable process for tungsten polycide contacts using amor

1995-04-27

1996-04-23

Fourson, George

Fishing, trapping, and vermin destroying

437 46, 437193, H01L 2128

Patent

active

055102964

ABSTRACT:
A method for creating manufacturable polycide contacts, for use in advanced semiconductor designs using images as small as 0.35 .mu.M, has been developed. An amorphous silicon film, is used as an underlay, to assist in the growth of an overlying tungsten silicide layer. The tungsten silicide deposition is performed using tungsten hexafluoride and silane, and in conjunction with the amorphous silicon underlay, results excellent step coverage in the narrow contact hole. A nitrogen anneal, using high flow rates, optimizes the adhesion characteristics of the tungsten polycide structure.

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patent: 5371041 (1994-12-01), Liou et al.
patent: 5374591 (1994-12-01), Hasegawa et al.

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