Manufacturing method for a semiconductor device having local int

Details Manufacturing method for a semiconductor device having local int Manufacturing method for a semiconductor device having local int

1994-12-27

1996-04-23

Fourson, George

Fishing, trapping, and vermin destroying

437192, 437200, 437245, H01L 2144

Patent

active

055102921

ABSTRACT:
A semiconductor device and a method for manufacturing a semiconductor device having local interconnections for making electrical connection among conductive regions. The semiconductor device and the method for manufacturing the same utilizes interconnections made of a material of which selectivity of etching is high with respect to a semiconductor layer. The local interconnection is formed by patterning a tungsten nitride film with an etchant gas including a gas comprising fluorine. In addition to the gas comprising fluorine, a gas comprising hydrogen is introduced, at the latest, when the tungsten nitride film becomes thinned.

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patent: 5162262 (1992-11-01), Ajika et al.
patent: 5190893 (1993-03-01), Jones, Jr. et al.
patent: 5419805 (1995-05-01), Jolly

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