Method for forming a field oxide layer in a semiconductor device

Details Method for forming a field oxide layer in a semiconductor device Method for forming a field oxide layer in a semiconductor device

1995-03-31

1996-04-23

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 72, H01L 2176, H01L 21762

Patent

active

055102905

ABSTRACT:
A method for forming a field oxide layer in a semiconductor device comprising the steps of: forming a pad oxide layer and a first resistant layer of oxidation, in turn, on a substrate; opening a field region by etching a portion of the said resistant layer of oxidation, whereby a part of the said pad oxide layer remains; forming the pad oxide layer into a nitric oxide layer; forming a second and a third resistant layer of oxidation, in turn, on a resultant structure; forming a spacer layer by applying anisotropic etching to the third resistant layer of oxidation; exposing a portion of the substrate by etching the second resistant layer of oxidation and the pad layer which is formed into the nitride layer; and forming the field oxide layer by oxidizing the substrate.

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