Method for fabricating stack capacitor of semiconductor device

Details Method for fabricating stack capacitor of semiconductor device Method for fabricating stack capacitor of semiconductor device

1995-06-01

1996-04-23

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437915, 437919, H01L 218242

Patent

active

055102891

ABSTRACT:
A method for fabricating a stack capacitor to be used for a highly integrated semiconductor device such as a DRAM of 64 mega grade or greater. Using the characteristic that a selective oxide film is likely to be deposited only over an oxide film and a good step coverage characteristic of polysilicon film, the stack capacitor is fabricated to have wing structures of a right 90.degree.-inverted U shape and a left 90.degree.-inverted U shape respectively at opposite ends of its storage electrode. These wing structures result in an increase in the surface area of the storage electrode.

REFERENCES:
patent: 5290726 (1994-03-01), Kim
patent: 5330928 (1994-07-01), Tseng
patent: 5449635 (1995-09-01), Jun

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