Method for forming narrow contact holes of a semiconductor devic

Details Method for forming narrow contact holes of a semiconductor devic Method for forming narrow contact holes of a semiconductor devic

1995-07-13

1996-04-23

Fourson, George

Fishing, trapping, and vermin destroying

437195, 437228, 437924, 148DIG111, 148DIG102, H01L 2144

Patent

active

055102867

ABSTRACT:
A method comprising the steps of forming an insulating film on a semiconductor substrate in which a certain infrastructure is built, forming a series of conductive wirings on the insulating film, forming a blanket interlayer insulating film over the resulting structure, forming first photoresist film patterns on the interlayer insulating film, the side walls of said patterns each being located above the conductive wirings, forming sacrificial film spacers at the side walls of the first photoresist film patterns, forming second photoresist film patterns on the interlayer insulating film between the sacrificial film spacers, and forming contact holes to expose areas of the conductive wirings by sequentially removing the sacrificial spacers and the thus exposed areas of the interlayer insulating film, which results in an improvement in the operating reliability of semiconductor devices and the production yield as well as the high integration of devices.

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patent: 5310693 (1994-05-01), Hsue
patent: 5397723 (1995-03-01), Shiroto
patent: 5429967 (1995-07-01), Hong
patent: 5429988 (1995-07-01), Huang et al.

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