Low-velocity electron excited phosphor and method for producing

Details Low-velocity electron excited phosphor and method for producing Low-velocity electron excited phosphor and method for producing

1993-12-02

1996-04-23

Nguyen, Nam

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

427523, B05D 306

Patent

active

055101542

ABSTRACT:
A low-velocity electron excited phosphor capable of exhibiting increased luminance and a method for producing the same. A matrix crystal for the phosphor is doped therein with an activator at implantation energy of 50 KeV by ion implantation, resulting in the activator entering a portion of the matrix crystal extending to a depth as small as 0.5 .mu.m from a surface thereof. Then, the phosphor is annealed for a reduced period of time as short as 10 seconds at a temperature of 900.degree. C. Such short-time annealing effectively prevents distribution of the activator in the matrix crystal formed during the implantation from being deeply spread into the matrix crystal by thermal diffusion. Thus, the activator concentratedly exists at only a portion of the matrix crystal in proximity to the surface thereof. Thus, the phosphor exhibits increased luminance as compared with a prior art, because luminescence of the phosphor is limited to the portion thereof in proximity to the surface.

REFERENCES:
patent: 5066514 (1991-11-01), Oyoshi
patent: 5075130 (1991-12-01), Reeber et al.
patent: 5098813 (1992-03-01), Nakano et al.
patent: 5194290 (1993-03-01), Robertson

Affiliated with

Also associated with

Rating

Low-velocity electron excited phosphor and method for producing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low-velocity electron excited phosphor and method for producing , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-velocity electron excited phosphor and method for producing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2306864