Method of manufacturing a semiconductor storage device

Details Method of manufacturing a semiconductor storage device Method of manufacturing a semiconductor storage device

1975-11-21

1977-08-23

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 357 91, B01J 1700

Patent

active

040430243

ABSTRACT:
A method of manufacturing a semiconductor storage device comprises the steps of forming a source region and a drain region in a surface of a semiconductor substrate of a first conductivity type in a manner to be spaced from each other, said source and drain regions having a second conductivity type; forming an insulating film on said semiconductor substrate between said source and drain regions; implanting ions of an electrically conductive element into said insulating film, to thus form a floating gate; and leading out source and drain electrodes from said source and drain regions, respectively. By varying the implantation energy and the implantation dose rate in the implanting step, the amount of charges to be accumulated in the floating gate can be controlled.

REFERENCES:
patent: 3328210 (1967-06-01), McCaldin
patent: 3413531 (1968-11-01), Leith
patent: 3507709 (1970-04-01), Bower
patent: 3852120 (1974-12-01), Johnson
patent: 3873373 (1975-03-01), Hill

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