Semiconductor light-emitting devices

Details Semiconductor light-emitting devices Semiconductor light-emitting devices

1989-06-26

1990-04-10

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

357 4, 357 16, 357 17, 357 90, 371 46, H01S 319

Patent

active

049167081

ABSTRACT:
A semiconductor light-emitting device is provided with optical guide layers that include at least part of compositionally graded layers provided adjacent to the light-emitting layer, and at least one end of the compositionally graded layers is provided with a bridging layer wherein the first derivative of each composition profile with respect to the layer thickness is continuous. This provides an extremely smooth change of composition from one layer to the next, and eliminates problems such as overshoot and undershoot, and can be accomplished using a general control system based on PID.

REFERENCES:
patent: 4512022 (1985-04-01), Tsang
patent: 4573161 (1986-02-01), Sakai et al.
patent: 4745612 (1988-05-01), Hayakawa et al.
W. T. Tsang, Chapter 7, vol. 24, Semiconductors and Semimetals, eds. R. K. Willardson & A. C. Beer, Academic Press, 1987.

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