Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-05-16
1995-10-10
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117953, 117954, 117956, 117957, C30B 2502
Patent
active
054562074
ABSTRACT:
Triisopropylindium diisopropyltelluride adduct, ((CH.sub.3).sub.2 CH).sub.3 In:Te(CH(CH.sub.3).sub.2).sub.2 is synthesized and is used as a universal n-type dopant for both II/VI semiconductor materials as well as III/V semiconductor materials is disclosed. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations down to 10.sup.14 cm.sup.-3 and does not exhibit an appreciable memory effect.
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Journal of Electronic Materials, vol. 22, No. 8 Korenstein et al. published un., 1993, "Indium Doping of HgCdTe Grown by Metalorganic Chemical Vapor Deposition-Direct Alloy Growth Using Triisopropylindium and Diisopropyltellurium Triisopropylindium Adduct".
Journal of Electronic Materials, vol. 22, No. 8 Irvine et al. published Jun., 1993, "A New N-Type Doping Precursor for MOCVD-IMP Growth of Detector Quality MCT".
Maier et al., "Growth, Properties and Applications of Narrow-Gap Semiconductors" in Crystals vol. 4, Springer-Verlag, New York 1980 pp. 176-177.
Ploog, "Molecular Beam Epitaxy of III-V Compounds" in Crystals, vol. 3 Springer-Verlag, New York, 1980 p. 115.
Robert W. Gedridge, Jr. et al., 08027314 filed Feb. 25, 1993.
Gedridge, Jr. Robert W.
Irvine Stuart J. C.
Korenstein Ralph
Forrest, Jr. John L.
Kunemund Robert
Sliwka Melvin J.
The United States of America as represented by the Secretary of
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