Semiconductor device having high blocking voltage with periphera

Details Semiconductor device having high blocking voltage with periphera Semiconductor device having high blocking voltage with periphera

1975-09-05

1977-08-02

James, Andrew J.

357 34, 357 56, 357 20, 357 52, H01L 2906, H01L 2972, H01L 2934

Patent

active

040400840

ABSTRACT:
A semiconductor device having a high blocking voltage, comprises a pair of principal surfaces opposite to each other, a circular groove cut in the peripheral portion of one of the principal surfaces and a PN junction formed along the surface of the groove and the one of the principal surfaces, wherein the region on the side of the PN junction near the one of the principal surfaces is of high impurity concentration, the outer edge of the PN junction appears in the bevel surface connecting the pair of principal surfaces, and the edge of the PN junction intersects the bevel surface in such a manner that the angle therebetween in the region of high impurity concentration is obtuse.

REFERENCES:
patent: 3738877 (1973-06-01), Davisohn
patent: 3821782 (1974-06-01), Hutson
patent: 3878552 (1975-04-01), Rodgers

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