Semiconductor cold electron emission device

Details Semiconductor cold electron emission device Semiconductor cold electron emission device

1976-09-20

1977-08-02

Edlow, Martin H.

357 16, 357 52, 357 17, 357 61, H01L 29161, H01L 2714

Patent

active

040400794

ABSTRACT:
A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

REFERENCES:
patent: B309756 (1975-01-01), Kressel
patent: 3667007 (1972-05-01), Kressel
patent: 3696262 (1972-10-01), Antypass
Schadi, Appl. Phys. Lett., vol. 20, No. 10, 15 May 1972.

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