Method of making a sapphire gate transistor

Details Method of making a sapphire gate transistor Method of making a sapphire gate transistor

1976-12-30

1978-06-27

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148187, 357 42, H01L 21225

Patent

active

040973140

ABSTRACT:
A method of making an improved aluminum oxide (sapphire) gate field effect transistor wherein the capacitance-voltage characteristic of the transistor is improved by annealing the aluminum oxide at a temperature less than the growth temperature of the aluminum oxide. A transistor annealed at a temperature less than the growth temperature is provided wherein the threshold voltage is the same as if the transistor were annealed at a temperature greater than the growth temperature; the capacitance-voltage characteristic of the transistor exhibiting markedly diminished hysteresis by annealing at a temperature less than the growth temperature.

REFERENCES:
patent: 3520722 (1970-07-01), Scott
patent: 3745072 (1973-07-01), Scott
patent: 3749614 (1973-07-01), Boleky et al.
patent: 3837071 (1974-09-01), Ronen
patent: 3890632 (1975-06-01), Ham et al.
patent: 3912558 (1975-10-01), Luce et al.
patent: 3933529 (1976-01-01), Goser
patent: 3958266 (1976-05-01), Athanas
patent: 3974515 (1976-08-01), Ipri et al.
patent: 4002501 (1977-01-01), Tamura

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