Thin film mesa transistor of field effect type with superlattice

Details Thin film mesa transistor of field effect type with superlattice Thin film mesa transistor of field effect type with superlattice

1988-03-11

1990-04-10

Mintel, William

357 16, 357 56, 357 232, 357 231, 357 58, 357 2, 357 55, H01L 2712

Patent

active

049165100

ABSTRACT:
A thin film mesa type FET having a gate electrode formed on a substrate. An insulating thin film layer is formed on the gate electrode. A multilayer structure is formed on the insulating thin film layer by alternately laminating a number of non-monocrystalline semiconductor material layers and a number of non-monocrystalline insulating material layers. The thickness of the semiconductor layers is 5 to 500 .ANG..

REFERENCES:
patent: 3626328 (1971-12-01), Esaki
patent: 3721583 (1973-03-01), Blakeslee
patent: 4558337 (1985-12-01), Saunier et al.
patent: 4642144 (1987-02-01), Tiedje et al.
Ableles et al, "Amorphous Semiconductor Superlattices," Physical Review Lehers, Nov. 21, 1983, vol. 51, No. 21, pp. 2003-2006.

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