High electron mobility power transistor

Details High electron mobility power transistor High electron mobility power transistor

1988-08-29

1990-04-10

Larkins, William D.

357 16, H01L 2980

Patent

active

049164988

ABSTRACT:
A high electron mobility transistor (HEMT) structure, and a corresponding method for its fabrication, in which the maximum power output is increased by a factor of approximately two. The structure includes a stop etch layer, which is of aluminum arsenide in the disclosed embodiment, and which functions both to facilitate selective etching during fabrication and, because of its relatively wide band-gap, as a current confinement layer during operation. Since the current confinement action has a detrimental effect in the region of the source contact of the device, by tending to raise the source resistance and the threshold voltage at which current saturation occurs, this effect is avoided by aligning the source region with an edge of the gate electrode during fabrication, to minimize the source resistance and the threshold voltage for maximum current saturation.

REFERENCES:
patent: 4205329 (1980-05-01), Dingle et al.
patent: 4615102 (1986-10-01), Suzuki et al.
patent: 4635343 (1987-01-01), Kuroda

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