Semiconductor device with semi-metal

Details Semiconductor device with semi-metal Semiconductor device with semi-metal

1988-12-23

1990-04-10

Wojciechowicz, Edward J.

357 4, 357 12, 357 15, 357 61, H01L 29161

Patent

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049164953

ABSTRACT:
A semiconductor device having a high switching speed and high current gain in the microwave region. A semi-metal base transistor is provided to reduce the energy difference between the conduction band edge of a base layer and the valance band edge of an emitter layer or a collector layer, and to reduce the base resistance.

REFERENCES:
App. Phys. Lett. 35(12) Dec. 15, 1979, 1980 American Institute of Physics, "Observation of Semiconductor-Semimetal Transition in InAs-GaSb Superlattices", L. L. Chang et al, pp. 939-942.
Solid-State Electronics, Pergamon Press 1966, vol. 9, "Appraisal of Semiconductor-Metal-Semiconductor Transistor", S. M. Sze et al., pp. 751-769.
International Electron Device Meeting, 1980 IEEE, "Tunneling Hot Electron Transfer Amplifiers (Theta): A Proposal for Novel Amplifiers Operating in the Subpicosecond Range", by Mordehai Heiblum, pp. 629-632.
Physical Review B, vol. 18, No. 6, Sep. 15, 1978, 1978 The American Physical Society, "InAs-GaSb Superlattice Energy Structure and Its Semiconductor-Semimetal Transition", by G. A. Sai-Halasz et al., pp. 2812-2818.

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