Hot-electron and hot-hole transistors having silicide contacts

Details Hot-electron and hot-hole transistors having silicide contacts Hot-electron and hot-hole transistors having silicide contacts

1983-04-01

1986-01-21

Carroll, James J.

357 13, 357 20, 357 34, 357 47, 357 65, 357 67, 357 71, 357 86, H01L 2948, H01L 2702, H01L 2348, H01L 2972

Patent

active

045660204

ABSTRACT:
A unipolar hot-electron or hot-hole transistor has its base region and/or collection region electrically contacted and extended to the semiconductor body surface by a metal-silicide region which extends through a silicon surface region belonging to either the transistor emitter or the emitter-base barrier. The metal-silicide region forms an isolating Schottky barrier with an adjacent semiconductor portion. Preferably, the surface region is divided into separate first and second portions by the base-contacting metal-silicide region, with the emitter-base barrier and base-collector barrier terminating at one or more sides in this metal-silicide region. The isolating Schottky barriers are good quality unipolar diodes, thus avoiding minority charge carrier storage effects in these unipolar transistors, while the metal-silicide region can form good ohmic contacts to highly-conductive base and collector regions which typically comprise a high-doped semiconductor layer or a metal-silicide layer.

REFERENCES:
patent: 4410902 (1983-10-01), Malik
patent: 4446476 (1984-05-01), Isaac et al.
patent: 4492971 (1985-01-01), Bean et al.
R. J. Malik et al, "GaAa Planar Doped Barriers by Molecular Beam Epitaxy", International Electron Devices Meeting, Technical Digest, 1980, pp. 456-459.

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