Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1992-12-21
1993-08-31
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257776, H01L 2702
Patent
active
052412121
ABSTRACT:
A semiconductor device includes a specific circuit portion having a predetermined function and a spare redundant circuit portion having the same function as the specific circuit portion. The semiconductor device includes a silicon substrate (1), an interlayer insulating film (2), an LT fuse (3), interconnection layers (4), a testing electrode (5) and a protection film (6). The interlayer insulating film (2) has a groove (11) and is formed on the silicon substrate (1). The LT fuse (3) is formed of polysilicon and is located immediately below the bottom wall of the groove (11). The interconnection layers (4) are formed on the interlayer insulating film (2) with the groove (11) therebetween. The testing electrode (5) is spaced from the interconnection layers (4) and is formed on the interlayer insulating film (2). The protection film (6) is formed on the interlayer insulating film to cover surfaces of the interconnection layers (4) and expose a surface of the testing electrode (5). A laser beam is irradiated to a bottom wall of the groove (11) to fuse and remove a part of the LT fuse (3). This substitutes the specific part having a defect with the redundant circuit portion. In this operation, neither the interconnection layers (4) is damaged, nor short-circuit and breakage thereof are caused.
REFERENCES:
patent: 4602420 (1986-07-01), Saito
patent: 4628590 (1986-12-01), Udo et al.
patent: 5025300 (1991-06-01), Billig et al.
IBM Technical Disclosure Bulletin, vol. 31, No. 12, May 1989, "Process and Structure for Laser Fuse Blowing".
Chlipapa et al., "Reliability Aspects of Laser Progammable Redundancy: Infrared vs. Green, Polysilicon vs. Silicide" IEEE/IRPS 1989, pp. 163-170.
Chih-Yuan Lu, "Explosion of Poly-Silicide Links in Laser Programmable Redundance for VLSI Memory Repair", IEEE Transactions on Electron Devices, vol. 36, No. 6, Jun. 1989.
Motonami Kaoru
Nagatomo Masao
James Andrew J.
Mitsubishi Denki & Kabushiki Kaisha
Monin D.
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