Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1992-01-08
1993-08-31
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
H01J 37304
Patent
active
052411850
ABSTRACT:
A method of proximity correction in an E-beam lithography system wherein each design shape is contracted by a predetermined bias and the E-beam dose required at any given point of the design is determined such that each of the design shapes is enlarged, on development, by the value of the predetermined bias, the determination of the E-beam dose being made in accordance with a predetermined relationship between an indicator, such as the electron backscatter, and the required E-beam dose, the indicator being defined for a plurality of points arranged on a coarse grid on the design and being indicative of the degree of the proximity effect at the respective point, the determination of the required dose being made by solving, at each of the plurality of points on the design, an integral equation relating the indicator to the E-beam dose distribution.
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O. W. Otto et al. "Proximity Correction of the AEBLE-150", J. Vac. Sci. Technol. B 6 (1) Jan./Feb. 1988, pp. 443-447.
Y. Machida et al. "Proximity-Effect Correction for VLSI Patterns in Electron-Beam Lithography", Microelectronic Engineering 2 (1984), pp. 245-257.
Meiri Abraham Z.
Ramm Dov
Anderson Bruce C.
Goodwin John J.
Harper Blaney
International Business Machines - Corporation
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