Process for fabricating quantum-well devices utilizing etch and

Details Process for fabricating quantum-well devices utilizing etch and Process for fabricating quantum-well devices utilizing etch and

1984-07-02

1986-03-18

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29578, 29580, 148175, 148DIG50, 148DIG110, 148DIG160, 148DIG169, 156612, 156613, 156643, 156648, 156662, 156DIG61, 156DIG70, 156DIG103, 357 4, 357 16, 357 22, H01L 21203, H01L 21302, H01L 29161

Patent

active

045759243

ABSTRACT:
The present invention teaches a process for fabrication of quantum-well devices, in which the quantum-wells are configured as small islands of GaAs in an AlGaAs matrix. Typically these islands are roughly cubic, with dimensions of about 100 Angstroms per side. To fabricate these, an n- on n+ epitaxial GaAs structure is grown, and then is etched to an e-beam defined patterned twice, and AlGaAs is epitaxially regrown each time. This defines the quantum wells of GaAs in an AlGaAs matrix, and output contacts are then easily formed.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki et al.
patent: 4103312 (1978-07-01), Chang et al.
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4257055 (1981-03-01), Hess et al.
patent: 4261771 (1981-04-01), Dingle et al.
patent: 4450463 (1984-05-01), Chin
patent: 4503447 (1985-03-01), Iafrate et al.
Vojak et al., "Low-Temperature--Quantum-Well AlGaAs--Deposition" J. Appl. Phys., 50(9) Sep. 1979, pp. 5830-5834.
Vojak et al., "Tunnel-Injection--Quantum-Well AlGaAs--Deposition, Ibid., 50(9) Sep. 1979, pp. 5835-5840.
Ralls et al., "Discrete Resistance Switching--Noise" Physical Rev. Lett., vol. 52, No. 3, Jan. 16, 1984, pp. 228-231.
Lebwohl et al., "Electrical Transport Properties in a Superlattice" J. Appl. Phys., vol. 41, No. 6, May 1970, pp. 2664-2667.
TSU et al. "Nonlinear Optical Response--Electrons in a Superlattice" Appl. Phys. Lett., vol. 19, No. 7, Oct. 1, 1971, pp. 246-248.
Chang et al., "Resonant Tunneling in Semiconductor Double Barriers" Appl. Phys. Lett., vol. 24, No. 12, Jun. 15, 1974, pp. 593-595.
Sollner et al., "Resonant Tunneling Through Quantum Wells--" Appl. Phys. Lett., vol. 43(6) Sep. 15, 1983, pp. 588-590.

Affiliated with

Also associated with

Rating

Process for fabricating quantum-well devices utilizing etch and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating quantum-well devices utilizing etch and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating quantum-well devices utilizing etch and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2299406