Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1984-05-02
1986-03-18
Ozaki, George T.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29591, 148 15, 148187, H01L 21425
Patent
active
045759200
ABSTRACT:
A method of manufacturing an insulated-gate field-effect transistor on a silicon substrate at high density for large scale integration is disclosed. The source and drain regions of the transistor are formed by implanting low density impurity ions into the silicon substrate and then heating the substrate at a temperature in the range of 900.degree. to 1300.degree. C. Thereafter, additional ions are implanted into the source and drain regions, and the substrate is heated at a second temperature of 700.degree. C., or lower, to provide good ohmic contact between metal electrodes and the source and drain regions. In addition, the sheet resistivity of the source and drain regions is small so that high speed operation of the transistor is achieved.
REFERENCES:
patent: 4079504 (1978-03-01), Kosa
patent: 4442589 (1984-04-01), Doo et al.
patent: 4458410 (1984-07-01), Sugaki et al.
patent: 4485550 (1984-12-01), Koeneke et al.
patent: 4498224 (1985-02-01), Maeguchi
Horiuchi et al., "Paper of the 44th Technological Symposium of Japanese Applied Physics Society", 1983, p. 391, Abstract 26p-M-7.
Kabushiki Kaisha Toshiba
Ozaki George T.
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