Semiconductor integrated circuit device and method of producing

Details Semiconductor integrated circuit device and method of producing Semiconductor integrated circuit device and method of producing

1991-04-30

1992-11-10

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 24, 257194, H01L 29161, H01L 2948, H01L 2702

Patent

active

051628775

ABSTRACT:
A semiconductor integrated circuit device comprising a negative differential resistance element, such as an RHET and RBT, and a field effect transistor, such as an SBFET and heterojunction type FET, which are formed on the same semiconductor substrate, a base layer of the negative differential resistance element and a channel layer of the field effect transistor being formed on the same epitaxial layer, and the same conductive material is used to simultaneously form an emitter electrode and a gate. A monolithic integration of both the element and transistor can be achieved both rationally and easily.

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"Integration of a Resonant-Tunneling Structure with a Metal-Semiconductor Field-Effect Transistor", Woodward et al, Applied Physics Letters 51, (19), Nov. 9, 1987, pp. 1542-1544.

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