Process and apparatus for making discrete type substrates by re-

Fishing – trapping – and vermin destroying

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437143, 83906, 148DIG12, H01L 21302, H01L 21304

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active

052408825

ABSTRACT:
This invention relates to a process and an apparatus for making a substrate of a semiconductor of a monolithic silicon wafer, or the like, for use as a discrete element such as a transistor, diode, or the like. In particular, the invention is directed to re-slicing the silicon wafer into two further pieces, to dope impurity diffused layers on both sides but not to provide any impurity diffused layer in the core portion of the silicon wafer. The re-slicing process is performed from substantially the center portion of its core thickness of the wafer so as to provide each re-sliced surface as a plain surface without any impurity diffused layer and for doping a further new impurity diffused layer, so as to obtain two pieces of a substrate as discrete elements simultaneously from one piece of the wafer by the re-slicing process and apparatus of the invention.

REFERENCES:
patent: 3247576 (1966-04-01), Dill, Jr. et al.
patent: 4261781 (1981-04-01), Edmonds et al.
patent: 4610079 (1986-09-01), Abe et al.
patent: 4771759 (1988-09-01), Zoebeli
patent: 5024867 (1991-06-01), Iwabachi
patent: 5073517 (1991-12-01), Iwabachi

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