Process for manufacturing an ohmic electrode for n-type cubic bo

Fishing – trapping – and vermin destroying

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Other Related Categories

437192, 437247, 257 76, H01L 21441, H01L 21324

Type

Patent

Status

active

Patent number

052408779

Description

ABSTRACT:
An ohmic electrode for n-type cubic boron nitride is disclosed. The electrode is made of two thin films; and the first is at least one alloy material selected from a group consisting of Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy, and the second is at least one metallic material selected from a group consisting of Ni, Cr, Mo and Pt.
A process for producing an ohmic electrode for n-type cBN is disclosed. The process is comprised of the following steps: providing a thin film of at least one alloy selected from Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy, the weight ratio of Si and Ge being from 0.1 to 35% by weight, on n-type cBN; providing a thin film of at least one metal selected from Ni, Cr, Mo and Pt on the thin alloy film; and subjecting the type cBN having the films thus provided to a heat-treatment process in an inert gas or in a vacuum at a temperature ranging from 350.degree. C. to 600.degree. C.

REFERENCES:
patent: 3850688 (1974-11-01), Halt
patent: 4831212 (1989-05-01), Ogata et al.
patent: 5006914 (1991-04-01), Beetz
patent: 5057454 (1991-10-01), Yoshida
Mishima et al., "Appl. Phys. Lett.", 53(11) pp. 962-964 (Sep. 12, 1988).

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