Method of making charge transfer device

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 50, H01C 2172

Patent

active

052408736

ABSTRACT:
A method of making a charge transfer device, capable of forming a plurality of transfer electrodes, using a single conductive layer, with a narrow transfer electrode gap enough to achieve a high transfer efficiency. The method comprises forming an impurity layer of a second conductivity type, a first insulating layer and a semiconductor layer in this order, over a first conductivity type semiconductor substrate, forming spaced semiconductor layer patterns, forming a second insulating layer over the resultant entire exposed surface and implanting impurity ions of the first conductivity type in the second conductivity type impurity layer so as to form spaced impurity layers of the first conductivity type, and forming a third insulating layer over the resultant entire exposed surface and etching back the third insulating layer to the semiconductor layer patterns. After removing the semiconductor layer patterns and the remaining third insulating layer, a conductive layer and a fourth insulating layer are formed over the entire surface of the remaining second insulating layer. Thereafter, the fourth insulating layer, the conductive layer and the second insulating layer are etched back, so as to form separate conductive layer patterns as transfer electrodes.

REFERENCES:
patent: 4083098 (1978-04-01), Nicholas

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making charge transfer device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making charge transfer device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making charge transfer device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2297073

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.