Method of forming a thyristor on an SOI substrate

Details Method of forming a thyristor on an SOI substrate Method of forming a thyristor on an SOI substrate

Filed on

1992-07-09

Date issued

1993-08-31

Examiner

Hearn, Brian E.

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437 21, 437 32, 437 64, H01L 4900

Type

Patent

Status

active

Patent number

052408655

Description

ABSTRACT:
A thyristor (38) is formed over an insulating layer (44). A gate (70) is operable to create a depletion region through the semiconductor layer (46) in which the thyristor (38) is implemented in order to turn the thyristor off. Isolation regions (48, 52) prevent operation of the thyristor from affecting adjacent devices.

REFERENCES:
patent: 4631561 (1986-12-01), Foroni et al.
patent: 4631567 (1986-12-01), Kokado et al.
patent: 4636830 (1987-01-01), Bhagat
patent: 4654543 (1987-03-01), Atsumi
patent: 4662957 (1987-05-01), Hagino
patent: 4794441 (1988-12-01), Sugawara et al.
patent: 4843448 (1989-06-01), Garcia et al.
patent: 4861731 (1989-08-01), Bhagat
patent: 4929563 (1990-05-01), Tsunoda e al.
patent: 4969023 (1990-11-01), Svedberg
patent: 4987087 (1991-01-01), Voss
patent: 4990978 (1991-02-01), Kondoh
patent: 5051808 (1991-09-01), Saito et al.
patent: 5075737 (1991-12-01), Shinohara
patent: 5077224 (1991-12-01), Schwarzbauer et al.
B. J. Baliga et al., "The MOS Depletion-Mode Thyristor: A New MOS-Controlled Bipolar Power Device", IEEE Electron Device Letters, vol. 9, No. 8, Aug. 1988, pp. 411-413.

Affiliated with

Also associated with

Rating

Method of forming a thyristor on an SOI substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a thyristor on an SOI substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a thyristor on an SOI substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2297003