Photovoltaic cell employing lattice matched quaternary passivati

Details Photovoltaic cell employing lattice matched quaternary passivati Photovoltaic cell employing lattice matched quaternary passivati

1975-09-25

1976-11-23

Mack, John H.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 30, 357 52, 250211J, H01L 3106, H01L 2934

Patent

active

039935060

ABSTRACT:
A photovoltaic cell has an active portion comprising at least one active layer of a IIIA-VA compound having a p-n junction adjacent an upper surface thereof and an overlying epitaxially grown passivating layer of the quaternary alloy AlGaAsP. The passivating layer has a substantially higher bandgap than the active layer so that it is transparent to photons to which the active layer is sensitive. The lattice constant of this passivating layer can be made the same as that of the active layer, thereby to improve efficiency and device performance by reducing surface recombinations of generated carriers, such that a greater percentage of generated carriers will reach the p-n junction and provide useful output electrical energy. The active portion comprises a GaAs layer covered by an AlGaAsP passivating layer, and the AlGaAsP passivating layer can be lattice matched to the GaAs layer.

REFERENCES:
patent: 3186873 (1965-06-01), Dunlap, Jr.
patent: 3675026 (1972-07-01), Woodall
patent: 3801509 (1974-04-01), Kurata et al.
H. J. Hovel et al., "Solar Cell Structures," IBM Technical Disclosure Bulletin, vol. 16, No. 7, Dec. 1973, pp. 2079-2080.
R. D. Burnham et al., "Al.sub.x Ga.sub.l.sub.-x AS.sub.l.sub.-yl Py.sup.1 --GaAs.sub.1.sub.-y Py Hetero-Structure Laser and Lamp Junctions," App. Phys. Letters, vol. 17, No. 10, pp. 455-457 (1970).
R. D. Burnham et al., "Double Heterojunction AlGaAsP Quaternary Lasers," App. Physics Letters, vol. 19, No. 2, pp. 25-28 (1971).

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