Photo-assisted annealing process for activation of acceptors in

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438 45, 438510, 438518, 438522, H01L 2100

Patent

active

057862338

ABSTRACT:
Active acceptor concentrations of p-doped II-VI and III-V semiconductor compound layer provided by chemical vapor deposition are increased by photo-assisted annealing.

REFERENCES:
patent: 4735910 (1988-04-01), Mitsuyu et al.
patent: 5063116 (1991-11-01), Mooney et al.
patent: 5264397 (1993-11-01), Lin et al.
patent: 5273933 (1993-12-01), Hatano et al.
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5354708 (1994-10-01), Taskar et al.
patent: 5426068 (1995-06-01), Imaizumi et al.
patent: 5496766 (1996-03-01), Amano et al.
patent: 5597761 (1997-01-01), Adomi et al.
Pearton et al. in "Electronics Letters, vol. 30(6),Mar. 1994", in Electrical passivationin hydrogen plasma exposed GaN, Mar. 1994.
Japan J. Applied Physics vol. 31 (1992), pp. 1258-1266 by S. Nakamura et al; vol. 30, 1991, pp. L-L; vol. 31, 1992, pp. L139-L142.
Applied Physics Letter, 65(5) 1994, pp. 593-594, by T. Tanka et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photo-assisted annealing process for activation of acceptors in does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photo-assisted annealing process for activation of acceptors in , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photo-assisted annealing process for activation of acceptors in will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-22965

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.