1983-11-10
1986-12-02
Edlow, Martin H.
357 68, 357 56, H01L 2974, H01L 2348
Patent
active
046268880
ABSTRACT:
In accordance with the present invention, a plurality of strip-shaped emitter layers on the cathode side are radially arranged on one main surface of the semiconductor substrate while forming a plurality of rings. A gate electrode is in ohmic contact with a part of a base layer which surrounds and is adjacent to each of said emitter layers on the cathode side. Between rings formed by said emitter layers on the cathode side, a ring-shaped gate collecting electrode is provided to be connected to said gate electrode. The gate collecting electrode is provided at a position to balance the potential differences produced by gate currents respectively corresponding to inside and outside of said gate collecting electrode.
REFERENCES:
patent: 4500903 (1985-02-01), Yatsuo et al.
patent: 4542398 (1985-09-01), Yatsuo et al.
Nagano et al., T. "Characteristics of a 3000V, 1000A Gate Turn-Off Thyristor" IAS Annual Meeting 1981, pp. 750-753.
Horie Akira
Nagano Takahiro
Oikawa Saburo
Yatsuo Tsutomu
Edlow Martin H.
Hitachi , Ltd.
Limanek R. P.
LandOfFree
Gate turn-off thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gate turn-off thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate turn-off thyristor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2296207