Power transistor

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Details

357 36, 357 51, 357 68, H01L 2972, H01L 2702, H01L 2348

Patent

active

046268863

ABSTRACT:
The invention relates to a power transistor with a semiconductor body. When shutting off a power transistor, local fusing of the semiconductor body may occur, if a characteristic power loss is exceeded for a certain period of time (second breakdown). This can be avoided, if the transistor includes a multiplicity of small partial transistors with very narrow emitter zones which are mutually paralleled via a ballast resistance each.

REFERENCES:
patent: 3462658 (1969-08-01), Worchel et al.
patent: 3868720 (1975-02-01), New et al.
patent: 3943546 (1976-03-01), Kaiser
patent: 4017882 (1977-04-01), Kannam et al.
patent: 4151542 (1979-04-01), Yajima et al.
patent: 4411708 (1983-10-01), Winhan
patent: 4511912 (1985-04-01), Mahrla
Electronic Engineering, Jul. 1983, pp. 78-79, FIG. 15.

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