Method of improving the mechanical properties of semiconductor m

Plastic and nonmetallic article shaping or treating: processes – Mechanical shaping or molding to form or reform shaped article – Shaping against forming surface

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

264 12, B29D 1100

Patent

active

052406709

ABSTRACT:
Mechanically toughened GaAs and other group III-V and group II-VI materials by hot-forging the GaAs and other materials to obtain the toughening or increase in mechanical strength. The material to be toughened is heated to its plastic temperature or higher but sufficiently below its melting point to maintain decomposition of the material to an acceptable level. A force or stress is then applied along a surface of the material which, acting in concert with the thermal energy (temperature) on the GaAs, is sufficient to nucleate and move dislocations along slip planes in the material to obtain slip or plastic deformation. The material is thereby being flattened due to the stress applied thereto, resulting in a fine, almost polycrystalline or textured (micron size grains) material. This slip process forms many dislocations throughout the GaAs and slightly rearranges most of the parts of the crystal. Therefore, if a crack must move through the material, there remains no one cleavage plane that extends from one end of the crystal to the other whereat the crack can continue to propagate. The crystallographic plane has been interrupted by all of the dislocations therein. It is this texturing of the material that increases the energy required to propagate a crack in the material and which renders the material tougher or mechanically stronger.

REFERENCES:
patent: 3794704 (1974-02-01), Strong
patent: 4118448 (1978-10-01), Anderson
patent: 4171400 (1979-10-01), Rosette et al.
patent: 4347210 (1982-08-01), Maguire et al.
patent: 4410468 (1983-10-01), Packer

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of improving the mechanical properties of semiconductor m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of improving the mechanical properties of semiconductor m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of improving the mechanical properties of semiconductor m will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2295869

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.