Method of producing high reliability heterojunction bipolar tran

Details Method of producing high reliability heterojunction bipolar tran Method of producing high reliability heterojunction bipolar tran

1991-08-30

1992-11-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437112, 257198, H01L 21265, H01L 2970

Patent

active

051622432

ABSTRACT:
A technique for producing high reliability GaAsAlGaAs heterojunction bipolar transistors by Molecular Beam Epitaxy with beryllium base doping. Beryllium incorporation and diffusion, during base-layer deposition, is controlled through a combination of reduced substrate temperature and increase As/Ga flux ratio during MBE growth resulting in extremely stable heterojunction bipolar transistor profiles. In addition, graded InGaAs surface layers with non-alloyed refractory metal contacts are shown to significantly improve ohmic reliability to alloyed AuGe contacts. High gain (DC beta) is achieved by the use of an increased substrate temperature during emitter deposition. The HBTs in accordance with the present invention are useful in a number of important microwave applications such as log amps, a/d converters, and sample and hold circuits where high reliability is desired.

REFERENCES:
"The Technology And Physics of Molecular Beam Epitaxy", E. H. C. Parker, 1985, pp. 53-55.

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