Method of manufacturing a semiconductor device

Fishing – trapping – and vermin destroying

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437 11, 437 12, 437974, 148DIG60, 148DIG135, H01L 21306

Patent

active

051622416

ABSTRACT:
A gettering site is formed on the backside of a wafer, contaminant impurities are trapped in the gettering site by heat treatment, a contaminated layer of the gettering site including the impurities is removed. The impurities are thus prevented from being freed from the gettering site into the wafer. A new gettering site is then formed on the backside of the wafer. Such a gettering operation has therefore a refresh function.

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patent: 5006475 (1991-04-01), Robbins et al.
Silicon Processing for the VLSI Era; vol. 1; Wolf et al.; 1986; pp. 61-70.

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