Semiconductor laser and method of producing the semiconductor la

Details Semiconductor laser and method of producing the semiconductor la Semiconductor laser and method of producing the semiconductor la

1994-07-19

1996-06-18

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 50, H01S 318

Patent

active

055286151

ABSTRACT:
A semiconductor laser includes a first conductivity type semiconductor substrate having opposite first and second surfaces, a first conductivity type semiconductor layer grown on the first surface, a thin GaInP or AlGaInP active layer having a band gap energy smaller than that of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer having a band gap energy larger than that of the active layer. The first conductivity type semiconductor layer has a first crystal plane that provides a quantum wire structure of the active layer and second crystal planes disposed at opposite sides of the first crystal plane. The first crystal plane forms a first angle smaller than a prescribed angle with a {100} surface, and the second crystal plane forms a second angle larger than the first angle with the {100} surface. The active layer is grown under growth conditions that produce atoms ordered opposite {100} surface and provide the active layer in a disordering state wherein atoms opposite a surface forming an angle with the {100} surface. Therefore, a semiconductor laser including a quantum wire with improved quantum effect is realized.

REFERENCES:
patent: 4801691 (1989-02-01), Scifries
patent: 5073893 (1991-12-01), Kondou
patent: 5138625 (1992-08-01), Paoli et al.
Bhat et al, "Patterned Quantum Well Heterostructures Grown By OMCVD On Non-Planar Substrates: Applications To Extremely Narrow SQW Lasers", Journal of Crystal Growth 1988, pp. 850-856.
Hamada et al, "AlGaInP Visible Laser Diodes Grown on Misoriented Substrates", IEEE Journal of Quantum Electronics, vol. 27, No. 6, 1991, pp. 1483-1490.

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