Plasma etching system for minimizing stray electrical discharges

Details Plasma etching system for minimizing stray electrical discharges Plasma etching system for minimizing stray electrical discharges

Filed on

1985-06-24

Date issued

1986-12-02

Examiner

Powell, William A.

Patent Class

Adhesive bonding and miscellaneous chemical manufacture

SubClass

Differential fluid etching apparatus

SubSubClass

With microwave gas energizing means

Other Related Categories

156643, 156646, 204298, B44C 122, C03C 1500, C03C 2506, C23F 102

Type

Patent

Status

active

Patent number

046263128

Description

ABSTRACT:
A plasma etching system includes a grounded reactor chamber having ungrounded chuck and counter electrodes therein. Circuitry is provided so that the potentials applied to the electrodes are about half those normally applied in single ended systems so that stray electrical discharges from the electrodes to the reactor chamber and other parts in the system are minimized.

REFERENCES:
patent: 4134817 (1979-01-01), Bourdon
patent: 4253907 (1981-03-01), Parry et al.
patent: 4399016 (1983-08-01), Tsukada et al.

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