Electroluminescent semiconductor diode with hetero-structure

Details Electroluminescent semiconductor diode with hetero-structure Electroluminescent semiconductor diode with hetero-structure

1974-11-12

1976-06-22

Smith, Alfred E.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

357 17, H01J 3912

Patent

active

039653471

ABSTRACT:
An electroluminescent semiconductor diode having a homogeneous monocrystalline semiconductor substrate providing a first zone on which an epitaxial layer has been formed providing a second zone. This second zone has a forbidden-band-width which changes steadily with increasing distance from the first zone. This second zone possesses a junction between a sub-zone having the properties of a "direct semiconductor" and a sub-zone having the properties of a so-called "indirect semiconductor" which lies parallel to the boundary between the first zone and the second zone and also parallel to the pn-junction of the diode. The pn-junction of the diode is located in the second zone and particularly in the sub-zone have the properties of an "indirect semiconductor" but at such a short distance from the junction of the two sub-zones that the major part of the charge carriers injected from the pn-junction in the direction towards the sub-zone having the properties of a direct semiconductor pass to this latter sub-zone.

REFERENCES:
patent: 3537029 (1970-10-01), Kressel et al.
patent: 3617820 (1971-11-01), Herzog
patent: 3636471 (1972-01-01), Rediker
patent: 3758875 (1973-09-01), Hayashi
patent: 3852797 (1974-12-01), Lebailly et al.

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