Fishing – trapping – and vermin destroying
Patent
1994-12-28
1998-03-24
Graybill, David E.
Fishing, trapping, and vermin destroying
437192, 437194, 437247, H01L 21283, H01L 2160
Patent
active
057312249
ABSTRACT:
A method for manufacturing ohmic contacts on an n-doped semiconductor layer of a III-V compound semiconductor. An AuGeNi layer is formed on the n-type III-V compound semiconductor, where the thickness of the AuGeNi layer is between 50 and 200 nm and both the germanium and the nickel concentration in the AuGeNi layer are less than 1 percent by weight. An Au layer with a thickness of between 250 and 1000 nm is applied to the AuGeNi layer. These layers are not alloyed but tempered either at a temperature between 430.degree. and 480.degree. C. for a period between 5 and 20 seconds or at a temperature between 360.degree. and 400.degree. C. for a period between 40 and 180 minutes. The metal semiconductor contact produced in this way has a low contact resistance and is free from the inhomogeneities of alloyed AuGeNi contacts.
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Graybill David E.
TEMIC Telefunken microelectronic GmbH
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