Fishing – trapping – and vermin destroying
Patent
1996-12-19
1998-03-24
Dutton, Brian
Fishing, trapping, and vermin destroying
437 52, 437186, 437228, 437233, H01L 21265, H01L 2144, H01L 21469, H01L 2170
Patent
active
057312184
ABSTRACT:
A method for producing a contact hole to a first doped region of a first conductivity type in a semiconductor wafer having doped regions of the first and of a second conductivity type, includes producing a first doped region in a substrate having a surface, and bounding the first doped region with insulation regions at least at the surface of the substrate. A diffusion barrier layer is produced leaving at least the first doped region free and covering a second doped region of a second conductivity type. An undoped silicon layer is deposited over the entire surface. A doped region is selectively produced in the silicon layer by implantation, and the doped region overlaps a region for a contact hole. Undoped portions of the silicon layer are selectively removed relative to the doped region. An insulation layer is produced over the entire surface. A contact hole is opened in the insulation layer by selective anisotropic etching relative to the doped region of the silicon layer.
REFERENCES:
patent: 4231820 (1980-11-01), Henry
patent: 4549340 (1985-10-01), Nagasawa et al.
patent: 4573257 (1986-03-01), Hulseweh
patent: 4640820 (1987-02-01), Thomas et al.
patent: 4717677 (1988-01-01), McLaughlin et al.
patent: 4729969 (1988-03-01), Suda et al.
patent: 5166088 (1992-11-01), Ueda et al.
patent: 5185294 (1993-02-01), Lam et al.
patent: 5266517 (1993-11-01), Smayling et al.
patent: 5275972 (1994-01-01), Ogawa et al.
patent: 5466636 (1995-11-01), Cronin et al.
Motorola Inc, Technical Developments Publ., vol. 12, Apr. 1991, "An Alignment-Tolerant Contact Process . . . ".
IBM Technical Disclosure Bulletin vol. 19, No. 8, Jan. 1987, p. 3423, "Diffusion Defined Bridge Contact".
IBM Technical Disclosure Bulletin vol. 34, No. 3, Aug. 1991, pp. 42-43, "Silicided Source/Drain Process for MOSFET".
Journal De Physique Publ. C4, Sep. 1988, pp. 504-506, "A Self Aligned Contact Process with Improved . . . ".
Electromechanical Society Publ. vol. 139, No. 8, Aug. 1992, pp. 2318-2322, "A Stacked Capacitor Cell with a . . . ".
Joswig Helmut
Melzner Hanno
Muller Wolfgang
Dutton Brian
Greenberg Laurence A.
Lerner Herbert L.
Siemens Aktiengesellschaft
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