Semiconductor device having bipolar transistor and method of pro

Details Semiconductor device having bipolar transistor and method of pro Semiconductor device having bipolar transistor and method of pro

1988-10-11

1992-03-10

Wojciechowicz, Edward J.

357 22, H01L 2972

Patent

active

050953516

ABSTRACT:
A semiconductor device has a base substrate made of a conductor or a semiconductor, an insulator layer formed on the base substrate, an active layer made of a semiconductor and formed on the insulator layer, where the active layer at least has a bipolar transistor formed therein having a base region, an emitter region and a collector region in the active layer, and a voltage source for applying a potential difference across the base substrate and the active layer in such a direction that an electric-field-induced layer is formed in the active layer in a vicinity of an interface between the insulator layer and the active layer. The electric-field-induced layer is used as a portion of a collector electrode of the bipolar transistor.

REFERENCES:
patent: 4885623 (1989-12-01), Holm-Kennedy et al.
patent: 4910562 (1990-03-01), Solomon
Strum et al.--Navy Tech Disc. Bul.--vol. XII, No. 2, Dec. 1986--pp. 47-49.
Reedy et al.--Navy Tech. Disc. Bul.--vol. 11, No. 2, Dec. 1985--pp. 23-27.
J. C. Sturm et al., "Vertical Bipolar Transistors in Laser-Recrystallized Polysilicon", IEEE Electron Device Letters, vol. EDL-6, No. 8, Aug. 1985, pp. 400-402.
D. R. Bradbury et al., "Device Isolation in Lateral CVD Epitaxial Silicon-on-Insulator", US Electrochemical Society, Extended Abstracts, vol. 84, No. 2, 1984, pp. 767-768.
B-Y. Tsaur et al., "Fully Isolated Lateral Bipolar-MOS Transistors Fabricated in Zone-Melting-Recrystallized S: Films on SiO2", IEEE Electron Device Letters, vol. EDL-4, No. 8, Aug. 1983.
James C. Sturm et al., "A Lateral Silicon-on-Insulator Bipolar Transistor with a Self-Aligned Base Contact", IEEE Electron Device Letters, vol. EDL-8, No. 3, Mar. 1987.

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