Plasma reactor and process with wafer temperature control

Details Plasma reactor and process with wafer temperature control Plasma reactor and process with wafer temperature control

1990-04-13

1991-05-21

Chaudhuri, Olik

Metal working

Barrier layer or semiconductor device making

H01L 2130, H01L 21324

Patent

active

050163329

ABSTRACT:
Gas plasma system and process which are particularly suitable for photoresist stripping and descumming operations. A wafer is placed on a heated platen in a processing chamber and is lifted away from the platen to control thermal contact between the wafer and the platen. The front side of the wafer is also heated with radiant heat energy, and the temperature of the platen is adjusted to control the temperature of the wafer. In the disclosed embodiments, a gas plasma is generated outside the processing chamber and introduced into the chamber through a gas distribution plate which is also transparent to the radiant heat energy.

REFERENCES:
patent: 4788416 (1988-11-01), Price
patent: 4888088 (1989-12-01), Slomowitz

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