Gallium phosphide JFET

Details Gallium phosphide JFET Gallium phosphide JFET

1978-12-22

1980-12-02

Wojciechowicz, Edward J.

357 30, 357 22, 357 41, 357 45, H01L 29161

Patent

active

042374731

ABSTRACT:
A gallium phosphide metal semiconductor field-effect transistor (MESFET) or a junction field-effect transistor (JFET) exhibits very low leakage current, is radiation hard, and is capable of high operating temperatures.

REFERENCES:
patent: 3721839 (1973-03-01), Shannon
patent: 3813585 (1974-05-01), Tarui
patent: 3915754 (1975-10-01), Schulze

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