Semiconductor device for integrated injection logic

Details Semiconductor device for integrated injection logic Semiconductor device for integrated injection logic

1976-10-05

1978-01-17

Wojciechowicz, Edward J.

357 44, 357 48, 357 89, H01L 2702, H01L 2704

Patent

active

040694950

ABSTRACT:
A semiconductor device for integrated injection logic comprises a semiconductor substrate of a first conductivity type, a signal input region of a second conductivity type provided in the substrate, at least one signal output region of the first conductivity type formed in part of the surface of the signal input region, a charge injection region provided closely to the signal input region and forming a pn junction with the substrate and having a higher impurity concentration than the signal input region, and electrodes provided for the substrate, signal input region, signal output region, and charge injection region, respectively. The signal input region includes a first region of the second conductivity type, and a second region provided in at least part of the surface of the first region and having the same conductivity type as that of the first region and having a higher impurity concentration than the first region, said second region being adjoined directly to the signal output region and connected to the signal input electrode.

REFERENCES:
patent: 3962717 (1976-06-01), O'Brien

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