Method for the manufacture of an insulated gate field effect sem

Details Method for the manufacture of an insulated gate field effect sem Method for the manufacture of an insulated gate field effect sem

1990-08-07

1992-03-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437238, 437241, 437 42, H01L 21285

Patent

active

050949667

ABSTRACT:
A method of manufacturing an TGFET is described. The gate electrode comprises Mo, Ti, W, MOSi.sub.2, WSi.sub.2, TiSi.sub.2 or mixtures thereof formed on a photo-CVD nitride layer.

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patent: 4481042 (1984-11-01), Takigawa et al.
patent: 4495218 (1985-01-01), Azuma et al.
patent: 4588610 (1986-05-01), Yamazaki
Lakatos, 1982 Int'l Display Research Conf., IEEE, pp. 146-151.
Chow et al., J. Electrochem. Soc.: Solid-State Science and Technology (Oct. 1984), pp. 2325-2335.

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