Novel integrated circuit and method of manufacturing same

Details Novel integrated circuit and method of manufacturing same Novel integrated circuit and method of manufacturing same

1976-04-26

1978-01-17

Wojciechowicz, Edward J.

357 23, 357 41, 357 51, 357 15, 357 88, 357 91, H01L 2980, H01L 2948, H01L 2702, H01L 2978

Patent

active

040694933

ABSTRACT:
An integrated circuit comprises a high-resistivity substrate 1 which virtually insulates the various integrated components of the circuit from one another and reduces the parasitic capacitances. This components are constituted by ion implantation through high-precision masks, without exceeding 800.degree. C in temperature. This is the case with the source 3, the gate 9 and the drain 4, of the field-effect transistor (shown in FIG. 1).

REFERENCES:
patent: 3413531 (1968-11-01), Leith
patent: 3761328 (1973-09-01), Abe et al.

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