Fishing – trapping – and vermin destroying
Patent
1990-04-27
1992-03-10
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437131, 437191, 437 32, 148DIG11, 148DIG124, 148DIG72, H01L 21331, H01L 21205
Patent
active
050949640
ABSTRACT:
In a method for manufacturing a heterojunction bipolar transistor using a silicon microcrystal as an emitter, a mask 4 having an opening on an element forming region of the main surface of an n-type silicon monocrystal substrate 1 serving as a collector, a p-type outer base 5 is formed on a part of the element forming region of the main surface of the substrate via the opening of the mask 4 by ion-implanting p-type impurity therein, a p-type inner base 6 is formed on the entire surface of the element forming region of the substrate 1 by ion-implanting p-type impurity therein after removing the mask 4, and an n-type emitter 8 is formed by depositing an n-type silicon microcrystal layer on the inner base 6 at a growth velocity of 15 .ANG./sec by a plasma chemical vapor deposition method in a state that the temperature of said substrate 1 is maintained at a constant temperature between 460.degree. to 550.degree. C.
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Hearn Brian E.
Kabushiki Kaisha Toshiba
Quach T. N.
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