Process for producing a semiconductor device with a bulk-defect

Details Process for producing a semiconductor device with a bulk-defect Process for producing a semiconductor device with a bulk-defect

1990-09-05

1992-03-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 11, 437248, 148DIG24, 148DIG127, H01L 21306

Patent

active

050949632

ABSTRACT:
The present invention relates to a semiconductor device e.g., a CMOS, comprising a denuded region and a bulk-defect region, as well as a process for producing, e.g., CMOS. In a conventional CMOS, the distance (dp) between the bulk-defect region and p.sup.+ -type source or drain region (dp) is greater than the distance (dn) between the bulk-defect region and the p well (dn). As a result, a leakage current can be generated in the PN junction. In order to eliminate the problems caused due to dp>dn, the present invention forms in a semiconductor substrate a bulk-defect region having a depth which is nonuniform in accordance with the nonuniform depth of the semiconductor elements.

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"Gettering . . . Silicon Wafers", Rozgonyi et al., Appl. Phys. Lett., vol. 32, No. 11, Jun. 1, 1978.

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