Laser diode operable in 1.3 .mu.m or 1.5 .mu.m wavelength band w

Details Laser diode operable in 1.3 .mu.m or 1.5 .mu.m wavelength band w Laser diode operable in 1.3 .mu.m or 1.5 .mu.m wavelength band w

1997-08-29

1999-07-13

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

059236914

ABSTRACT:
A laser diode includes an active layer of a group III-V compound semiconductor device containing N and As as the group V elements. The active layer has exposed lateral edges wherein the N atoms are substituted by the As atoms at the exposed lateral edges by an annealing process conducted in a AsH.sub.3 atmosphere.

REFERENCES:
patent: 5561681 (1996-10-01), Nishimura
English translation of Japanese Patent JP 07-154023, Jun. 16, 1995.
Miyashi, et al. "Growth parameters for metastable GaP1x-Nx alloys in MOVPE" (Inst. Phys. Conf. Ser. No. 141:2 (1994)).

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