Static induction transistor

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Details

357 22, 357 89, 357 90, 357 92, 357 41, H01L 2702

Patent

active

042164907

ABSTRACT:
A static induction transistor having a channel region between a gate region and a source region of the transistor. Current flowing from the drain region to the source region through the channel region is controlled by a voltage applied to the gate region. An impurity region having a conductivity type opposite that of the channel region is formed in the channel region and is effective to decrease the channel current which will flow when the gate region is biased by a low voltage.

REFERENCES:
patent: 4067036 (1978-01-01), Yoshida
patent: 4086611 (1978-04-01), Nishizawa
patent: 4115793 (1978-09-01), Nishizawa

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