Method of designing a high-frequency circuit

Details Method of designing a high-frequency circuit Method of designing a high-frequency circuit

1994-03-17

1996-06-18

Ramirez, Ellis B.

Boots, shoes, and leggings

364480, 364489, 330253, H03F 316

Patent

active

055285090

ABSTRACT:
The S-parameters of a transistor are measured at a plurality of bias points, and using a tentatively decided load resistance value, the S-parameters on the load curve are examined, based on which the power gain and input/output power characteristics are obtained to determine the optimum load. Then, by using a linear simulator, input and output circuits are designed so that the optimum load can be realized.

REFERENCES:
patent: 4511978 (1985-04-01), Reug
JRG. Twisleton, The ABCD, Z and Y Matrix Description of Microwave Transistors, Microwave Journal, pp. 141, 143, 144, 146, 150, 152, 155, 156.
"Large-Signal Analysis for Microwave FETs Using S-Parameters" (Yoshio Aoki & Jun Fukaya)--The 3rd Asia-Pacific Microwave Conference Proceedings, Tokyo, 1990.

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